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| TRANSCOM TC1102 January 2002 Super Low Noise GaAs FETs FEATURES * * * * * Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 m, Wg = 160 m All-Gold Metallization for High Reliability 100 % DC Tested PHOTO ENLARGEMENT DESCRIPTION The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain. The device can be used in circuits up to 40 GHz and suitable for low noise application including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 C) Symbol NF Ga IDSS gm VP BVDGO Rth CONDITIONS Noise Figure at VDS = 2 V, IDS = 10 mA,, f = 12GHz Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA Drain-Gate Breakdown Voltage at IDGO =0.08 mA Thermal Resistance MIN 11 TYP 0.5 13 40 55 -1.0 8 90 MAX 0.7 UNIT dB dB mA mS Volts Volts C/W 5 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 9 TC1102 ABSOLUTE MAXIMUM RATINGS (TA=25 C) Symbol VDS VGS IDS IGS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Gate Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 5V -3.0 V IDSS 160 A 14 dBm 150 mW 175 C - 65 C to +175 C TYPICAL NOISE PARAMETERS (TA=25 C) VDS = 2 V, IDS = 10 mA Frequency NFopt (GHz) (dB) 2 0.30 4 0.32 6 0.34 8 0.37 10 0.42 12 0.47 14 0.56 16 0.70 18 0.87 GA (dB) 19.0 17.4 15.7 14.3 12.9 11.9 11.4 11.2 10.9 opt MAG 0.98 0.84 0.68 0.51 0.38 0.28 0.25 0.32 0.49 ANG 15 30 50 76 107 146 193 250 317 Rn/50 0.40 0.35 0.26 0.19 0.12 0.08 0.07 0.11 0.23 CHIP DIMENSIONS 280 12 D S G S 250 12 Units: Micrometers Chip Thickness: 100 Gate Pad: 55 x 60 Drain Pad: 55 x 60 Source Pad: 55 x 14 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science- Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 10 TRANSCOM TC1102 TYPICAL SCATTERING PARAMETERS (TA=25C) VDS = 2 V, IDS = 10 mA 1.0 6 0. 2. 0 Swp Max 18GHz 0 3. 0 4. 0 5. 10.0 60 Mag Max 0.15 5 13 Swp Max 18 GHz 45 0.8 90 S11 75 105 0 12 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 -0 .6 .0 -2 -1 35 .4 -0 -0.8 -1 20 -1.0 -105 6 0. 60 Mag Max 5 5 13 15 0 Swp Max 18 GHz 45 1.0 90 0.8 75 2. 0 30 15 165 0 -180 -165 50 -1 S21 -3 0 -1 35 -1 20 -105 -0 .6 -1.0 1 Per Div Swp Min 2 GHz -0.8 .0 -2 .4 -0 FREQUENCY (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 MAG 0.9909 0.9805 0.9673 0.9524 0.9367 0.9209 0.9057 0.8913 0.8780 0.8659 0.8551 0.8453 0.8366 0.8290 0.8222 0.8163 0.8111 ANG -20.88 -30.94 -40.57 -49.69 -58.26 -66.26 -73.69 -80.57 -86.92 -92.79 -98.22 -103.24 -107.89 -112.20 -116.22 -119.96 -123.45 MAG 4.1640 4.0654 3.9385 3.7916 3.6326 3.4682 3.3038 3.1430 2.9885 2.8417 2.7033 2.5737 2.4526 2.3399 2.2349 2.1373 2.0464 S21 ANG 163.83 156.02 148.51 141.35 134.56 128.16 122.13 116.45 111.09 106.02 101.22 96.66 92.32 88.16 84.17 80.33 76.64 MAG 0.0305 0.0447 0.0577 0.0694 0.0798 0.0888 0.0966 0.1033 0.1090 0.1139 0.1181 0.1216 0.1247 0.1272 0.1295 0.1313 0.1329 S12 ANG 77.18 71.04 65.20 59.71 54.59 49.85 45.48 41.45 37.74 34.32 31.16 28.24 25.52 22.98 20.61 18.38 16.28 MAG 0.7466 0.7346 0.7193 0.7019 0.6835 0.6650 0.6471 0.6302 0.6146 0.6005 0.5880 0.5770 0.5674 0.5593 0.5525 0.5468 0.5423 * The data does not include gate, drain and source bond wires. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 11 -3 .0 -4 . -5. 0 0 2 -0. Swp Min 2GHz -10.0 -15 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0. 4 0.2 -3 .0 -4 . -5. 0 0 2 -0. Swp Min 2GHz -10.0 0. 4 15 0 165 30 15 0 0.2 105 0 12 10.0 -180 -15 -165 S12 5 -4 50 -1 0 -6 -3 0 -75 0.075 Per Div Swp Min 2 GHz -90 Swp Max 18GHz 0 3. 0 4. 0 5. S22 10.0 5 -4 0 -6 -75 -90 S22 ANG -11.01 -16.27 -21.26 -25.95 -30.31 -34.35 -38.08 -41.53 -44.73 -47.70 -50.49 -53.11 -55.59 -57.95 -60.21 -62.39 -64.49 TC1102 SMALL SIGNAL MODEL, VDS = 2 V, IDS = 10 mA SCHEMATIC Lg Rg Cgs Ri T Cgd Gm Cds Rds Rd Ld PARAMETERS Parameters Lg Rg Cgs Ri 0.0384 nH 0.97 Ohm 0.222 pF 1.78 Ohm 0.0273 pF 53.3 mS 1.49 psec Parameters Rs Ls Cds Rds Rd Ld 1.72 Ohm 0.001 nH 0.061 pF 328 Ohm 1.698 Ohm 0.0286 nH Rs Ls Cgd Gm T CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290C 5C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220C to 250C; Bond Tip Temperature: 150C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 12 |
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